Mixology: Right Mix of Hafnium and Zirconium Provides a Surprising Boost in Permittivity in High-k Gate Dielectric

Author: Barbara Walsh

Kurt J. Lesker

The Nanoelectronic Devices and Circuits Lab, in collaboration with Purdue University and Kurt J. Lesker Company recently developed conformal atomic layer deposition (ALD) based hafnium zirconium oxide thin film processes displaying excellent electrical properties for potential gate oxide complement or replacement in scaled logic and memory technology nodes. (Read More)